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| SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURES Complementary to KTA1282. B KTC3210 EPITAXIAL PLANAR NPN TRANSISTOR C A N MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING 30 30 5 2 -2 625 150 -55 150 UNIT V V V A A mW L K D E G H F F 1 2 3 M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification 0:100 200, Y:160 SYMBOL ICBO IEBO V(BR)CEO V(BR)EBO hFE (Note) VCE(sat) VBE fT Cob 320 TEST CONDITION VCB=30V, IE=0 VEB=5V, IC=0 IC=10mA, IB=0 IC=1mA, IC=0 VCE=2V, IC=500mA IC=1.5A, IB=0.03A VCE=2V, IC=500mA VCE=2V, IC=500mA VCB=10V, IE=0, f=1MHz MIN. 30 5 100 TYP. 120 13 MAX. 100 100 320 2.0 1.0 V V MHz pF UNIT nA nA V V 1999. 9. 10 Revision No : 0 1/2 KTC3210 I C - VCE COLLECTOR CURRENT I C (mA) 1400 1200 1000 800 600 400 200 0 0 2 4 6 8 4 3 2 I B=1mA 0 h FE - I C DC CURRENT GAIN h FE COMMON EMITTER Ta=25 C 6 1600 10 8 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 COMMON EMITTER VCE =2V 10 10 12 14 1 3 10 30 100 300 1k 5k COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) I C - V BE COLLECTOR CURRENT I C (mA) 1600 1400 1200 1000 800 600 400 200 0 0 5k 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE-EMITTER VOLTAGE V BE (V) 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 0.5 0.3 Ta=-25 C Ta=25 C Ta=100 C COMMON EMITTER I C /I B =50 COMMON EMITTER VCE =2V 0.1 0.05 0.03 0.01 Pc - Ta 700 COLLECTOR POWER DISSIPATION Pc (mW) 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 1999. 9. 10 Revision No : 0 C Ta=25 C Ta=-25 C Ta=100 2/2 |
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